Ā Professor at Yonsei University, South Korea
Seongil Im is a distinguished Professor of Physics at Yonsei University in Seoul, Korea, where he also serves as the Director of the vdW Materials Research Center. He holds a Ph.D. in Materials Science & Engineering from the University of California, Berkeley. With a rich academic background and extensive experience in research and teaching, Prof. Im has made significant contributions to the field of device physics and electronics, particularly in the development of advanced semiconductor materials and devices.
Author Metrics:
Scopus Profile
Google Scholar Profile
Prof. Im’s publications have garnered significant attention, with many of his papers receiving high citation counts. Notably, his work on MoS2 nanosheet phototransistors has been cited over 1200 times, indicating its substantial impact on the research community.
Citations: Seongil Im has accumulated a total of 17,389 citations.
h-index: His h-index is 65, indicating that he has published 65 papers that have each been cited at least 65 times.
i10-index: The i10-index is 254, which means he has at least 254 papers that have been cited at least 10 times each.
Education:
Prof. Im completed his Bachelor’s and Master’s degrees in Metallurgical Engineering from Yonsei University, followed by a Ph.D. in Materials Science & Engineering from the University of California, Berkeley.
Research Focus:
Prof. Im’s research interests encompass device physics and electronics, with a particular emphasis on display and photoelectric device stability analysis, as well as the study of 2D nanosheet and low-dimensional devices.
Professional Journey:
After completing his Ph.D., Prof. Im embarked on a successful academic career, joining Yonsei University as an Assistant Professor before progressing to the position of Professor in the Institute of Physics and Applied Physics. He also spent time as a Research Fellow at CalTech, where he further honed his expertise in applied physics and electrical engineering.
Honors & Awards:
Prof. Im has received prestigious accolades throughout his career, including the Underwood Distinguished Professor title and the Samsung Human Tech Award in Physical Devices and Science. His contributions to research have been recognized with honors such as the Nano Korea award and the Yonsei Academy Award in Basic Science.
Publications Top Noted & Contributions:
Prof. Im has authored numerous impactful publications in renowned journals, focusing on topics such as ultrafast semiconductor devices, 2D nanosheet electronics, and photovoltaic behavior. His book, “Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors,” stands as a significant contribution to the field.
Title: MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
- Authors: HS Lee, SW Min, YG Chang, MK Park, T Nam, H Kim, JH Kim, S Ryu, S Im
- Journal: Nano Letters
- Year: 2012
- Citations: 1472
- Summary: This paper discusses the fabrication and characteristics of MoS2 nanosheet phototransistors with a modulated optical energy gap.
Title: Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition
- Authors: BJ Jin, S Im, SY Lee
- Journal: Thin Solid Films
- Year: 2000
- Citations: 695
- Summary: This paper investigates the violet and UV luminescence emitted from ZnO thin films grown on sapphire substrates using pulsed laser deposition.
Title: Improving the gate stability of ZnO thin-film transistors with aluminum oxide dielectric layers
- Authors: MS Oh, K Lee, JH Song, BH Lee, MM Sung, DK Hwang, S Im
- Journal: Journal of the Electrochemical Society
- Year: 2008
- Citations: 673
- Summary: The paper focuses on enhancing the gate stability of ZnO thin-film transistors by incorporating aluminum oxide dielectric layers.
Title: Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AMāOLED display
- Authors: SHK Park, M Ryu, CS Hwang, S Yang, C Byun, JI Lee, J Shin, SM Yoon, …
- Journal: SID Symposium Digest of Technical Papers
- Year: 2008
- Citations: 666
- Summary: This paper presents a transparent ZnO thin film transistor designed for high aperture ratio bottom emission active-matrix organic light-emitting diode (AM-OLED) displays.
Title: Ultraviolet-enhanced photodiode employing ZnO/SiO2/Si structure
- Authors: IS Jeong, JH Kim, S Im
- Journal: Applied Physics Letters
- Year: Not provided
- Citations: Not provided
- Summary: This paper discusses an ultraviolet-enhanced photodiode utilizing a ZnO/SiO2/Si structure.
Research Timeline:
Prof. Im’s research journey spans several decades, starting from his early academic pursuits in metallurgical engineering to his current role as a distinguished professor leading cutting-edge research in materials science and device physics. Throughout this timeline, he has consistently contributed groundbreaking research findings and mentored the next generation of scientists and engineers.
